ISC 2SC2334

Inchange Semiconductor
Product Specification
2SC2334
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA1010
・Low collector saturation voltage
・Fast switching speed
APPLICATIONS
・Switching regulators
・DC/DC converters
・High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
IB
Base current
3.5
A
PT
Total power dissipation
Ta=25℃
1.5
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2334
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=5.0A ,IB=0.5A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
Ta=125℃
10
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
40
hFE-3
DC current gain
IC=5A ; VCE=5V
20
100
UNIT
V
200
Switching times resistive load
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5.0A IB1=-IB2=0.5A
RL=10Ω;VCC≈50V
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC2334
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC2334
Silicon NPN Power Transistors
4