Inchange Semiconductor Product Specification 2SC3086 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=800V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/3A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 3 A 6 A 1 A IC Collector current ICP Collector current-peak IB Base current PC Collector dissipation PW≤300μs, Duty Cycle≤10% TC=25℃ 40 W 1.75 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3086 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 hFE-2 DC current gain IC=1.5A ; VCE=5V 8 fT Transition frequency IC=0.3A ; VCE=10V 18 MHz COB Output capacitance f=10MHz ; VCB=10V 40 pF 50 Switching times ton Turn-on time tstg Storage time tf VCC=200V; IC=2A IB1=0.4A;IB2=-0.4A; RL=100Ω Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3086 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3