SAVANTIC 2SC3088

SavantIC Semiconductor
Product Specification
2SC3088
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO 800V)
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·500V/4A Switching Regulator Applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
7
V
4
A
8
A
1.5
A
IC
Collector current
ICP
Collector current-peak
IB
Base current
PC
Collector power dissipation
PW5300µs, Duty Cycle510%
Ta=25
2.5
TC=25
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3088
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=B
500
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
15
hFE -2
DC current gain
IC=1.5A ; VCE=5V
8
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
40
pF
fT
Transition frequency
IC=0.3A ; VCE=10V
18
MHz
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=-IB2=0.4 A
RL=100G,VCC=200V
hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
1.0
µs
3.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC3088