SAVANTIC 2SC3156

SavantIC Semiconductor
Product Specification
2SC3156
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
: VCBO=900V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
6
A
20
A
3
A
120
W
IC
Collector current
ICP
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
PW3300µs, Duty Cycle310%
TC=25
SavantIC Semiconductor
Product Specification
2SC3156
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=A
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=3A; IB=0.6A
2.0
V
VBE(sat)
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.4A ; VCE=5V
10
hFE-2
DC current gain
IC=2A ; VCE=5V
8
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
120
pF
fT
Transition frequency
IC=0.4A ; VCE=10V
15
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A; IB1=0.8A;IB2=-1.6A
VCC=400V ,RL=100F
2
1.0
µs
2.5
µs
0.7
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC3156