SAVANTIC 2SC4164

SavantIC Semiconductor
Product Specification
2SC4164
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
12
A
25
A
4
A
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PC
Collector dissipation
PW/300µs,duty cycle/10%
Ta=25
1.75
TC=25
70
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
SavantIC Semiconductor
Product Specification
2SC4164
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE==
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
1.5
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1.6A; VCE=5V
15
hFE-2
DC current gain
IC=8A; VCE=5V
10
hFE-3
DC current gain
IC=10mA; VCE=5V
10
Transition frequency
IC=1.6A ; VCE=10V
20
MHz
Collector output capacitance
f=1MHz ; VCB=10V
160
pF
fT
Cob
CONDITIONS
MIN
TYP.
MAX
UNIT
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A; IB1=2A
IB2=-4A; VCC=200V
RL=20D
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
0.5
µs
2.5
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC4164
SavantIC Semiconductor
Product Specification
2SC4164
Silicon NPN Power Transistors
4