ISC 2SC3409

Inchange Semiconductor
Product Specification
2SC3409
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage
・Fast switching speed
・Wide area of safe operation
APPLICATIONS
・For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
10
V
2
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3409
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A ;IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A;IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=0.5A ; VCE=4V
2
MIN
15
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC3409
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3