ISC 2SC2304

Inchange Semiconductor
Product Specification
2SC2304
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High speed ,high voltage
·Wide area of safe operation
APPLICATIONS
·For switching regulator application
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
12
A
100
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Tmb≤25℃
Inchange Semiconductor
Product Specification
2SC2304
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=4V
15
hFE -2
DC current gain
IC=10A ; VCE=4V
10
Transition frequency
IC=1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
35
MHz
Inchange Semiconductor
Product Specification
2SC2304
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3