Inchange Semiconductor Product Specification 2SC2838 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・For high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25°C) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V 12 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2838 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=5 A; IB=0.5 A 1.8 V ICBO Collector cut-off current VCB=140V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=1A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 60 70 MHz Inchange Semiconductor Product Specification 2SC2838 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3