ISC 2SC5416

Inchange Semiconductor
Product Specification
2SC5416
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High breakdown voltage
・High reliability
APPLICATIONS
・For inverter lighting applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
4
A
ICM
Collector current-peak
8
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC5416
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4 A
1.5
V
ICBO
Collector cut-off current
VCB=450V; IE=0
10
μA
ICES
Collector cut-off current
VCE=1000V; RBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
30
hFE-2
DC current gain
IC=1.5A ; VCE=5V
10
450
UNIT
V
50
Switching times
ts
Storage time
2.5
μs
0.15
μs
IC=2A;IB1=0.4A ;IB2=-0.8A
tf
Fall time
2
Inchange Semiconductor
Product Specification
2SC5416
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
2SC5416
Silicon NPN Power Transistors
4