Inchange Semiconductor Product SpecificationI 2SC3569 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2 A ICM Collector current-peak 4 A IB Base current 1 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3569 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A; IB=0.1A;L=1mH VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=0.5 A;IB=0.1A 1.2 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 400 UNIT V 80 Switching times ton Turn-on time ts Storage time tf Fall time IC=0.5A;RL=300Ω IB1=- IB2=0.1A VCC=150V hFE-1 classifications R O Y 20-40 30-60 40-80 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3569 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3