ISC 2SD2089

Inchange Semiconductor
Product Specification
2SD2089
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3P(H)IS package
・Built-in damper diode
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・Small screen color TV horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
1500
VCEO
Collector-emitter voltage
Open base
600
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PC
Collector power dissipation
V
5
V
3.5
A
1
A
Ta=25℃
3.5
Tc=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2089
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat
Collector-emitter saturation voltage
IC=2.2A; IB=0.7A
0.3
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.2A; IB=0.7A
0.85
1.0
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
hFE
DC current gain
IC=0.5A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
VF
Diode forward voltage
IF=2.2A
1.2
1.5
V
Fall time
ICP=2.2A ;IB1(end)=0.7A
0.2
0.5
μs
fT
tf
2
5
UNIT
V
9
18
Inchange Semiconductor
Product Specification
2SD2089
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3