ISC 2SD834

Inchange Semiconductor
Product Specification
2SD834
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High DC current gain
・DARLINGTON
・Low collector saturation voltage
・Excellent safe operating area
APPLICATIONS
・Electronic ignitor
・Relay and solenoid drivers
・Switching regulators
・Motor controls
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
VALUE
UNIT
250
V
200
Open base
VCEO(SUS)
VEBO
Collector-emitter voltage
V
180
Emitter-base voltage
Open collector
10
V
4
A
0.3
A
25
W
IC
Collector current-continuous
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SD834
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1A ; IB=0
180
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
200
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.1mA ; IE=0
250
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=2A;IB=2mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A;IB=2mA
2.0
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
10
mA
hFE
DC current gain
IC=2A ; VCE=2V
1.7
μs
15.0
μs
18.0
μs
1500
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A;IB1=-IB2=5mA; RL=10Ω
PW=20μs;Duty≤2%
2
Inchange Semiconductor
Product Specification
2SD834
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3