Inchange Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.8 V VBEsat Base-emitter on voltage IC=-5A; IB=-0.5A -1.8 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-5A ; VCE=-2V 40 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=-15A;IB1=-IB2=-1.5A RL=2Ω;PW=20μs,Duty≤2% 2 1.0 μs 2.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3