ISC BUH417D

Inchange Semiconductor
Product Specification
BUH417D
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
・Built-in damper diode
APPLICATIONS
・Switching power supply for TV’s
and monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
7
A
ICM
Collector current -peak
12
A
IB
Base current (DC)
4
A
IBM
Base current -peak
tp<5ms
7
A
Ptot
Total power dissipation
TC=25℃
55
W
tp<5ms
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BUH417D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A ; IB=1A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4A ; IB=1A
1.3
V
ICES
Collector cut-off current
VCE=1700V; VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
200
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=5V
6
Diode forward voltage
IF=4A
VF
CONDITIONS
MIN
TYP.
MAX
700
UNIT
V
36
2
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.27
℃/W
Inchange Semiconductor
Product Specification
BUH417D
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3