SavantIC Semiconductor Product Specification BUH515D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 8 A ICM Collector current -peak 15 A IB Base current (DC) 5 A IBM Base current -peak 8 A Ptot Total power dissipation 50 W Tstg Storage temperature TC=25 -65~150 SavantIC Semiconductor Product Specification BUH515D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MIN TYP. MAX UNIT IC=5A ;IB=1.25A 1.5 V Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES-1 Collector cut-off current VCE=1300V; VBE=0 10 µA ICES-2 Collector cut-off current VCE=1500V; VBE=0 Tj=125 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 200 mA hFE DC current gain IC=5A ; VCE=5V VF Diode forward voltage IF=5A 5 10 2 V 2.4 3.6 µs 170 260 ns Switching times ts Storage time tf Fall time IC=5A;IB1=1.5A;-IB2=2.5A; VCC=400V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUH515D