ISC BUH715

Inchange Semiconductor
Product Specification
BUH715
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage,high speed
APPLICATIONS
・Horizontal deflection for monitors.
・Switching mode power supplies
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
10
A
ICM
Collector current (Pulse)
20
A
IB
Base current (DC)
5
A
IBM
Base current (Pulse)
10
A
Ptot
Total power dissipation
57
W
150
℃
-65~150
℃
MAX
UNIT
2.2
℃/W
Tj
Tstg
TC=25℃
Operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BUH715
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA
10
V
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=1.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=1.5A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
Tj=125℃
1
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=7A ; VCE=5V
8
16
Switching times
ts
Storage time
2.1
3.1
μs
140
210
ns
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
tf
Fall time
2
Inchange Semiconductor
Product Specification
BUH715
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3