Inchange Semiconductor Product Specification S2000AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・High voltage ・Fast switching APPLICATIONS ・Horizontal deflection for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO PARAMETER CONDITIONS C I M E S E NG Collector-base voltage A H C IN OND Open emitter R O T UC VALUE UNIT 1500 V Collector-emitter voltage Open base 700 V Emitter-base voltage Open collector 10 V Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W VEBO IC TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification S2000AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V fT 体 导 半 Transition frequency 固电 Switching times inductive load ts tf Storage time IC=0.1A ; VCE=5V;f=5MHz EM S E NG A H C IN Fall time CONDITIONS MIN TYP. MAX UNIT 8 D N O IC R O T UC 7 MHz 7 μs 0.55 μs IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3μH 2 Inchange Semiconductor Product Specification S2000AF Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3