Inchange Semiconductor Product Specification BUH313 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・Horizontal deflection for color TV ・Switch mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 5 A ICM Collector current-peak tp<5ms 10 A Ptot Total power dissipation TC=25℃ 50 W 150 ℃ -65~150 ℃ Tj Tstg Operating junction temperature Storage temperature Inchange Semiconductor Product Specification BUH313 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.75A 1.3 V ICES Collector cut-off current VCE=1300V; VBE=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 5.5 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.8 ℃/W Inchange Semiconductor Product Specification BUH313 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3