Inchange Semiconductor Product Specification BUH517 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors. ・Switching power supplies for TV’s and monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICM Collector current (Pulse) 15 A IB Base current (DC) 5 A IBM Base current (Pulse) 8 A Ptot Total power dissipation 60 W 150 ℃ -65~150 ℃ Tj Tstg Operating junction temperature Storage temperature TC=25℃ Inchange Semiconductor Product Specification BUH517 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES Collector cut-off current VCE=1700V; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=5V 2.7 3.9 μs 190 280 ns 6 Switching times ts Storage time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.08 ℃/W Inchange Semiconductor Product Specification BUH517 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3