isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT46 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·General purpose switching ·Switch mode power supply ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.76 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT46 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 5.0 V Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.3 V ICBO Collector Cutoff Current VCB= 850V; IE= 0 VCB= 850V; IE= 0; TC=125℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V VBE(sat) isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX 400 B B B 10 UNIT V 35