isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage VBE=0 VALUE BUV82 850 BUV83 1000 BUV82 400 BUV83 450 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUV82 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 400 IC= 0.1A ;IB= 0; L=25 mH V B BUV83 450 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A 1.6 v ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE DC Current Gain IC= 0.6A; VCE= 5V 22 Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V;ftest= 1MHz 6 fT B B MHz Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A; IB1= 0.5A;IB2= -1.0A; VCC= 250V 2 0.3 0.6 μs 2.0 3.5 μs 0.3 0.75 μs