Inchange Semiconductor Product Specification BUV26A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 14 A ICM Collector current (peak) 25 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation 65 W 150 ℃ -65~150 ℃ PARAMETER MAX UNIT Thermal resistance junction to mounting base 1.92 K/W Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb Inchange Semiconductor Product Specification BUV26A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=0.5 A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VBEsat-1 Base-emitter saturation voltage IC=5A ;IB=0.5 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=1A 1.5 V ICEX Collector cut-off current VCE =200V;VBE =-1.5V;Tj=125℃ 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 0.4 0.6 ms 0.45 1.0 μs 0.12 0.25 μs 100 UNIT V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=10A;IB1=1A; IB2=2A VCE =50V 2 Inchange Semiconductor Product Specification BUV26A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3