ISC MJ12005

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ12005
DESCRIPTION
· Collector-Emitter VoltageVCEX = 1500V
·Safe Operation Area
APPLICATIONS
·Designed for use in deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
1500
V
VCEX
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
4
A
IE
Emitter Current-Continuous
12
A
PC
Collector Power [email protected]=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ12005
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=50mA ; IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC=5A; IB=1A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=5A; IB=1A
1.5
V
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0
0.25
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
0.1
mA
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
12
Fall Time
IC=5A , IB1=1A; LB=8μH
0.4
1.0
μs
tf
isc Website:www.iscsemi.cn
CONDITIONS
B
2
MIN
TYP.
MAX
750
UNIT
V