isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU109 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min) APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage- VBE= -1.5V 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak(Repetitive) 10 A ICM Collector Current-Peak(t= 10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU109 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 VCE= 200V; VBE= 0 VCE= 200V; VBE= 0,TC=150℃ 5.0 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V toff Turn-Off Time IC= 5A; IB= 0.5A isc Website：www.iscsemi.cn 2 150 B B B MAX UNIT V 10 MHz 0.75 μs