ISC 2N5427

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N5427
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
1
A
PC
Collector Power [email protected]=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
4.37
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N5427
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
0.7
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
1.2
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
2.0
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
0.1
mA
ICEX
Collector Cutoff Current
VCE= 75V; VBE(off)= -1.5V
VCE= 75V; VBE(off)= -1.5V,TC=150℃
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.1
mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
30
hFE-3
DC Current Gain
IC= 5A; VCE= 2V
20
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f=10MHz
20
fT
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
MAX
80
UNIT
V
120
MHz