isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE51T DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 250V(Min) APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE51T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 10V 2.0 V ICEO Collector Cutoff Current VCE= 150V; IB=0 1.0 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 10V 30 hFE-2 DC Current Gain IC= 5A ; VCE= 10V 5 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=0.1MHz 150 pF 250 UNIT V B Switching times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= 2.5A , IB1= -IB2= 0.5A VBE(off)= 5V; VCC= 125V 2 0.5 μs 2.0 μs