isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N5344 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.0 A IB Base Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 4.38 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N5344 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -250V; IE= 0 -0.1 mA ICEX Collector Cutoff Current VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V 25 hFE-2 DC Current Gain IC= -1A ; VCE= -5V 7 Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -20V 60 Output Capacitance IE= 0; VCB= -10V fT COB CONDITIONS MIN MAX -250 UNIT V 100 MHz 200 pF 0.2 μs 0.7 μs Switching times ton Turn-On Time toff Turn-Off Time IC= -0.5A, IB1= -IB2= -0.05A; VCC= -100V isc Website：www.iscsemi.cn 2