ISC 2N5344

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2N5344
DESCRIPTION
·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min)
·High Switching Speed
·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A
APPLICATIONS
·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.0
A
IB
Base Current-Continuous
-0.5
A
PD
Total Power [email protected]=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
4.38
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2N5344
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -10mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.2A
-3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -1A; IB= -0.2A
-1.5
V
ICBO
Collector Cutoff Current
VCB= -250V; IE= 0
-0.1
mA
ICEX
Collector Cutoff Current
VCE= -225V; VBE(off)= -1.5V
VCE= -225V; VBE(off)= -1.5V,TC= 150℃
-0.1
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
25
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
7
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -20V
60
Output Capacitance
IE= 0; VCB= -10V
fT
COB
CONDITIONS
MIN
MAX
-250
UNIT
V
100
MHz
200
pF
0.2
μs
0.7
μs
Switching times
ton
Turn-On Time
toff
Turn-Off Time
IC= -0.5A, IB1= -IB2= -0.05A;
VCC= -100V
isc Website:www.iscsemi.cn
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