JMNIC 2SA1878

JMnic
Product Specification
2SA1878
Silicon PNP Power Transistors
DESCRIPTION
・With ITO-220 package
・Switching power transistor
・Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-Peak
-10
A
IB
Base current
-1.5
A
IBM
Base current-Peak
-2.0
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1878
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.5A; IB=-0.25A
-0.3
V
VBEsat
Base-emitter saturation voltage
IC=-2.5A; IB=-0.25A
-1.2
V
ICBO
Collector cut-off current
At rated volatge
-0.1
mA
ICEO
Collector cut-off current
At rated volatge
-0.1
mA
IEBO
Emitter cut-off current
At rated volatge
-0.1
mA
hFE
DC current gain
IC=-2.5A ; VCE=-2V
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
70
50
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-2.5A;IB1=-0.25A
IB2=0.25A ,RL=12Ω
VBB2=4V
2
0.3
μs
1.5
μs
0.2
μs
JMnic
Product Specification
2SA1878
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3