SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A PC Collector power dissipation TC=25 25 Ta=25 2.0 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 hFE-2 DC current gain IC=6A ; VCE=3V 1000 100 UNIT V 15000 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=6mA VCC>45V ,RL=15@ Fall time 2 0.3 µs 5.1 µs 0.6 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1415A