JMnic Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current-DC -5 A ICM Collector current-Pulse -8 A IB Base current-DC -0.5 A PT Total power dissipation TC=25℃ 30 W Ta=25℃ 1.5 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB601 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-3A, IB1=-3mA,L=1mH VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -10 μA ICEX Collector cut-off current VCE=-100V, VBE=-1.5V Ta=25℃ -10 -1.0 μA mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE-1 DC current gain IC=-3A ; VCE=-2V 2000 hFE-2 DC current gain IC=-5A ; VCE=-2V 500 Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz -100 UNIT V 15000 300 pF Switching times ton Turn-on time tstg Storage time tf IC=-3A; IB1=-IB2=-3mA VCC=-50V;RL=17Ω Fall time hFE-1Classifications M L K 2000-5000 3000-7000 5000-15000 2 0.5 μs 1.0 μs 1.0 μs JMnic Product Specification 2SB601 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3