SEMICONDUCTOR KTK5132U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. M 1.5V. M D J A 2 3 G 1 H L C MAXIMUM RATING (Ta=25 B ) N CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGSS 20 V DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25+ _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.10 0.42 + 0.10 MIN N K 1. SOURCE 2. GATE 3. DRAIN DC Drain Current ID 100 mA Drain Power Dissipation PD * 200 mW Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150 Note) * Package Mounted On 99.5% Alumina 10 8 0.6 USM ) EQUIVALENT CIRCUIT Marking D Type Name G KB S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IGSS Gate Leakage Current TEST CONDITION VGS= 16V, VDS=0V MIN. TYP. MAX. UNIT - - 1 A V(BR)DSS ID=100 A, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7 Drain-Source Breakdown Voltage Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF - 50 - nS - 180 - nS Turn-on Time Switching Time Turn-off Time 2003. 7. 8 Revision No : 0 ton toff VDD=5V, ID=10mA, VGS=0 5V 1/3 KTK5132U I D - VDS I D - V DS 2.5V 2.2V 80 60 1.0 COMMON SOURCE Ta=25 C DRAIN CURRENT ID (mA) 2.0V 1.8V 40 1.6V 20 1.4V VGS =1.2V 6 8 10 12 0.6 1.1V 0.4 1.05V 0.2 1.0V 0 0.1 COMMON SOURCE VGS =0 Ta=25 C 3 D 1 0.3 I DR G 0.1 S 0.03 0 -0.4 -0.8 Y fs -1.2 10 3 1 0.3 Ta=-25 C 0.03 0 1 3 100 5 COMMON SOURCE VGS =0 CAPACITANCE C (pF) 50 30 10 5 10 4 C - VDS - ID 50 5 2 GATE-SOURCE VOTAGE VGS (V) Ta=25 C 3 Ta=25 C 0.1 0.01 -1.6 COMMON SOURCE V DS =3V 1 0.6 COMMON SOURCE VDS =3V 30 DRAIN-SOURCE VOTAGE V DS (V) 100 0.5 I D - VGS 100 300 0.4 I DR - VDS 10 FORWARD TRANSFER ADMITTANCE Yfs (mS) 0.3 DRAIN-SOURCE VOLTAGE VDS (V) 30 30 DRAIN CURRENT ID (mA) 2003. 7. 8 0.2 DRAIN-SOURCE VOLTAGE VDS (V) 100 0.01 1.15V 0.8 0 DRAIN CURRENT I D (mA) DRAIN REVERSE CURRENT I DR (mA) 4 2 COMMON SOURCE Ta=25 C 1.2V VGS =0.9V 0 0 2.5V Ta= 100 C DRAIN CURRENT I D (mA) 100 (LOW VOLTAGE REGION) Revision No : 0 50 100 f=1MHz Ta=25 C 30 C oss C iss 10 5 3 1 0.1 C rss 0.3 0.5 1 3 5 10 20 DRAIN-SOURCE VOLTAGE VDS (V) 2/3 KTK5132U VDS(ON) - I D 1K 0.1 0.05 0.03 500 300 t on tr t off tf 100 50 5V V IN 0 10µs 30 0.01 0.005 1 3 5 10 30 50 100 ID VDD =5V D.U. < = 1% VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VOUT RL 0.5 0.3 50Ω COMMON SOURCE VGS =2.5V Ta=25 C 1 SWITCHING TIME t (ns) DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 2 t - ID VDD 10 1 3 DRAIN CURRENT I D (mA) 5 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN POWER DISSIPATION PD (mW) PD - Ta 300 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 2 Ta=25 C 1 200 2 100 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 5V VOUT D.U. < = 1% VIN RL 10µs VIN VIN (Z OUT =50Ω) COMMON SOURCE VDD Ta=25 C 5V 0 V IN :t r , t f < 5ns 50Ω 0 VDD =5V 90% 10% V DD 10% VOUT 90% V DS (ON) t on 2003. 7. 8 Revision No : 0 tf tr t off 3/3