KEXIN 2SA1745

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1745
Features
Very small-sized package.
Low collector-to-emitter saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-20
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Collector current (pulse)
ICP
-1
A
Collector dissipation
PC
150
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
IcBO
VCB = -15V , IE = 0
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
DC current Gain
hFE
VCE = -2V , IC = -10mA
fT
VCE = -2V , IC = -50mA
Gain bandwidth product
Common base output capacitance
Cob
Collector-to-emitter saturation voltage
VCE(sat)
Min
135
Max
Unit
-0.1
nA
-0.1
nA
600
400
MHz
VCB = -10V , f = 1MHz
6.5
IC = -5mA , IB =-0.5mA
-15
-35
mV
IC = -200mA , IB =-10mA
-200
-360
mV
-0.95
-1.2
VBE(sat) IC = -200mA , IB =-10mA
Base-to-emitter saturation voltage
Typ
pF
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-20
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
hFE Classification
ES
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
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