KEXIN 2SD1619

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD1619
Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse)
ICP
2
A
PC
500
mW
PC *
1.3
W
Collector dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 20 V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 4 V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 2 V , IC = 50 mA
fT
VCE = 10 V , IC = 50 mA
Cob
VCB = 10 V , f = 1.0MHz
Gain bandwidth product
Output capacitance
Testconditons
Min
Typ
100
560
180
MHz
15
pF
Collector-emitter saturation voltage
VCE(sat) IC = 500 mA , IB = 50 mA
0.1
0.3
V
Base-emitter saturation voltage
VBE(sat) IC = 500 mA , IB = 50 mA
0.85
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
25
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
hFE Classification
DB
Marking
Rank
R
S
T
U
hFE
100 200
140 280
200 400
280 560
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