KEXIN 2SD1251

Transistors
SMD Type
Silicon NPN Triple Diffusion Junction Type
2SD1251,2SD1251A
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Wide area of safe operation.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
2SD1251
VCBO
2SD1251A
Collector-emitter voltage
2SD1251
VCEO
2SD1251A
Rating
Unit
60
V
80
V
60
V
80
V
VEBO
8
V
Collector current
IC
4
A
Peak collector current
ICP
6
A
Base current
IB
1
A
1.3
W
30
W
Emitter-base voltage
Collector power dissipation
Ta = 25
PC
Tc = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SD1251,2SD1251A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-base cutoff current
Emitter-base cutoff current
Collector to emitter voltage
2SD1251
Testconditons
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 8 V, IC = 0
VCEO(sus) IC = 0.25 A, L = 25 mH
2SD1251A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 1 A
30
VCE = 3 V, IC = 0.1 A
40
VCE = 10 V, IC = 0.2 A, f = 0.5 MHz
fT
hFE Classification
Rank
Q
P
O
hFE
30 60
50 100
80 160
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Unit
30
ìA
1
mA
160
1.2
VCE(sat) IC = 2 A, IB = 0.4 A
Collector-emitter saturation voltage
Max
60
VCE = 3 V, IC = 1 A
VBE
Transition frequency
2
Typ
80
Forward current transfer ratio
Base-emitter voltage
Min
1
1
V
V
MHz