KEXIN 2SB1070A

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB1070A
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Low collector-emitter saturation voltage VCE(sat).
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High-speed switching.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-4
A
Peak collector current
ICP
-8
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-emitter voltage
VCEO
IC = -10 mA, IB = 0
Min
Typ
Max
-40
Unit
V
Collector-base cutoff curent
ICBO
VCB = -50 V,IE = 0
-50
ìA
Emitter-base cutoff current
IEBO
VEB = -5 V, IC = 0
-50
ìA
Forward current transfer ratio
hFE
VCE = -2 V, IC = -1 A
90
VCE = -2 V, IC = -0.1 A
45
260
Base-emitter saturation voltage
VBE(sat) IC = -2 A, IB = -0.1 A
-1.5
V
Collector-emitter saturation voltage
VCE(sat) IC = -2 A, IB = -0.1 A
-0.5
V
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
VCE = -5 V, IC = -0.5 A , f = 10 MHz
IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A,
VCC = -20 V
150
MHz
0.3
ìs
0.4
ìs
0.1
ìs
hFE Classification
Rank
Q
P
hFE
90 180
130 260
www.kexin.com.cn
1