KEXIN 2SD1766

Transistors
SMD Type
Medium Power Transistor
2SD1766
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
+0.1
2.50-0.1
+0.1
0.53-0.1
+0.1
0.48-0.1
+0.1
0.44-0.1
+0.1
2.60-0.1
Low VCE(sat), VCE(sat) = 0.5V (typical)
+0.1
0.80-0.1
Features
+0.1
4.00-0.1
+0.1
1.80-0.1
+0.1
3.00-0.1
1. Base
+0.1
0.40-0.1
(IC = 2A, IB = 0.2A).
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
2
A
Collector current
IC
1
IC (Pulse) *
2.5
A
PC
0.5
W
PC *2
2
W
Collector power dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1. Pw=20ms.
*2. 40 40 0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
BVCBO
IC=50ìA
40
V
Collector-emitter voltage
BVCEO
IC=1mA
32
V
Emitter-base voltage
5
BVEBO
IE=50ìA
Collector cutoff current
ICBO
VCB=20V
1
ìA
Emitter cutoff current
IEBO
VEB=4V
1
ìA
hFE
VCE=3V,IC=0.5A
Forward current transfer ratio
VCE(sat) IC=2A,IB=0.2A
Collector-emitter saturation voltage
Transition frequency
fT
Output capacitance
Cob
V
82
390
0.5
0.8
V
VCE=5V, IE= -500mA, f=100MHz
100
MHz
VCB=10V, IE=0A, f=1MHz
30
pF
hFE Classification
DB
Marking
Rank
P
Q
R
hFE
82 180
120 270
180 390
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