KEXIN 2SD2114K

Transistors
IC
SMD Type
Power Transistor
2SD2114K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High emitter-base voltage.
1
Low VCE (sat).
0.55
High DC current gain.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
12
V
Collector current
0.5
IC
A
1 *
Collector power dissipation
0.2
PC
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
W
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=10ìA
25
Collector-emitter breakdown voltage
BVCEO
IC=1mA
20
V
Emitter-base breakdown voltage
BVEBO
IE=10ìA
12
V
ICBO
VCB=20V
IEBO
VEB=10V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
VCE(sat) IC/IB=500mA/20mA
DC current transfer ratio
hFE
VCE=3V, IC=10mA
V
0.18
820
0.5
ìA
0.5
ìA
0.4
V
2700
Output capacitance *
fT
VCE=10V, IE= -50mA, f=100MHz
350
MHz
Transition frequency
Cob
VCB=10V, IE=0, f=1MHz
8.0
pF
Output On-resistance
Ron
IB=1mA, Vi=100mV(rms), f=1kHz
0.8
Ù
* Measured using pulse current.
hFE Classification
BB
Marking
Rank
V
W
hFE
820 1800
1200 2700
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