KEXIN 2SD1949

Transistors
IC
SMD Type
Medium Power Transistor
2SD1949
Features
High current.(IC=5A)
Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=1mA
50
V
Collector-emitter breakdown voltage
BVCEO
VCB=30V
50
V
Emitter-base breakdown voltage
BVEBO
VEB=4V
5
V
Collector cutoff current
ICBO
VCE/IC=3V/0.01A
0.5
ìA
Emitter cutoff current
IEBO
VCE=5V , IE= -20mA , f=100MHz
0.5
ìA
DC current transfer ratio
hFE
VCB=10V , IE=0A , f=1MHz
120
390
VCE(sat) IC=100ìA
Collector-emitter saturation voltage
Output capacitance
fT
Transition frequency
Cob
0.4
V
IE=100ìA
250
MHz
IC/IB=150mA/15mA
6.5
pF
hFE Classification
Y
Marking
Rank
Q
R
hFE
120 270
180 390
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