KEXIN 2SD2121S

Transistors
SMD Type
Silicon NPN Epitaxial
2SD2121S
TO-252
Features
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low frequency power amplifier.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
35
V
Collector to emitter voltage
VCEO
35
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
2.5
A
Peak collector current
ICP
3
A
W
PC
18
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector power dissipation
TC = 25
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = 1 mA, IE = 0
35
V
Collector to emitter breakdown voltage
V(BR)CEO IC = 10 mA, RBE =
35
V
Emitter to base breakdown voltage
V(BR)EBO IE = 1 mA, IC = 0
5
V
Collector cutoff current
VCB = 35 V, IE = 0
ICBO
DC current transfer ratio *
hFE
Base to emitter voltage *
60
VCE = 2 V,IC = 1.5 A
20
VCE = 2 V,IC = 1.5 A
VBE
VCE(sat) IC = 2 A,IB = 0.2 A
Collector to emitter saturation voltage *
20
VCE = 2 V,IC = 0.5 A
ìA
320
1.5
V
1.0
V
* Pulse test.
hFE Classification
Marking
B
C
D
hFE
60 120
100 200
160 320
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