KEXIN 2SC2776

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2776
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
4
Collector cutoff current
ICBO
VCB = 10V, IC = 0
DC current transfer ratio
hFE
VCE = 6 V, IC = 1 mA
VCE(sat) IC = 10 mA, IB = 1 mA
Collector to emitter saturation voltage
Collector output capacitance
Cob
V
0.5
35
ìA
200
0.8
1.2
V
VCB = 10 V, IE = 0, f = 1 MHz
1.1
pF
Gain bandwidth product
fT
VCE = 6 V, IC = 1 MA
320
MHz
Noise figure
NF
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ù
5.5
dB
Power gain
PG
17
dB
VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg =
100Ù, RL = 550Ù
hFE Classification
Marking
VA
VB
VC
Rank
A
B
C
hFE
35 70
60 120
100 200
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