KEXIN MJD45H11

Transistors
SMD Type
Complementary Power Transistors
MJD45H11
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Lead Formed for Surface Mount Applications in Plastic Sleeves
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
0.127
max
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
Pb?Free Packages are Available
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Complementary Pairs Simplifies Designs
+0.15
0.50 -0.15
Fast Switching Speeds
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VCEO
80
V
VEB
5
V
Collector current
IC
8
A
Collector current (pulse)
ICP
16
A
Total Device Dissipation FR-5 Board
@TA = 25
Derate above 25
PD
20
0.16
W
W/
Total Device Dissipation Alumina Substrate
@TA = 25
Derate above 25
PD
1.75
0.014
W
W/
Collector-emitter voltage
Emitter-base voltage
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Thermal Resistance, Junction?to?Case
RèJC
6.25
/W
Thermal Resistance, Junction-to-Ambient
RèJA
71.4
/W
TL
260
Lead Temperature for Soldering
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1
Transistors
SMD Type
MJD45H11
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter sustaining voltage
Collector cutoff current
Emitter cutoff current
Min
Typ
Max
80
Unit
V
ICES
VCE = Rated VCEO,VEB = 0
10
ìA
IEBO
VBE = 5V, IC = 0
50
ìA
Collector-emitter saturation voltage
VCE(sat) IC = 8 A, IB = 0.4 A
1
V
Base-emitter saturation voltage
VBE(sat) IC = 8 A, IB = 0.8 A
1.5
V
DC current gain
hFE
Collector capacitance
Ccb
Current-gain-bandwidth product *2
Delay and rise times
fT
td + tr
IC = 2 A, VCE = 1 V
60
IC = 4 A, VCE = 1 V
40
VCB = 10 V,ftest = 1 MHz
230
pF
IC = 0.5 A,VCE = 10 V,f = 20 MHz
40
MHz
IC = 5 A, IB1 = 0.5 A
135
ns
Storage time
ts
IC = 5 A, IB1 = IB2 = 0.5 A
500
ns
Fall time
tf
IC = 5 A, IB1 = IB2 = 0.5 A
100
ns
Marking
Marking
2
Testconditons
VCEo(sus) IC = 30 mA, IB = 0
J45H11
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