KEXIN MMBT5088

Transistors
IC
SMD Type
NPN General Purpose Amplifier
MMBT5088,MMBT5089
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
NPN general purpose amplifier
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
MMBT5088
MMBT5089
Unit
Collector-emitter voltage
Parameter
VCE0
30
25
V
Collector-base voltage
VCBO
35
30
V
Emitter-base voltage
VEBO
4.5
V
Collector current
IC
100
mA
Junction temperature
Tj
150
Storage temperature
Tstg
Total device dissipation
Derate above 25
-55 to +150
PD
625
5.0
Thermal resistance, junction to case
RèJC
83.3
Thermal resistance, junction to ambient
RèJA
200
350
2.8
mW
mW/
/W
357
/W
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1
Transistors
IC
SMD Type
MMBT5088,MMBT5089
Electrical Characteristics Ta = 25
unless otherwise noted
Parameter
Symbol
MMBT5088
Collector-emitter breakdown
voltage
V(BR)CEO
Testconditons
IC = 1.0 mA, IB = 0
MMBT5089
MMBT5088
Collector-base breakdown voltage
MMBT5088
V(BR)CBO
ICBO
IEBO
MMBT5088
DC current gain
IC = 100 ìA, IE = 0
Unit
V
35
V
hFE
VCB = 20 V, IE = 0
50
nA
VCB = 15 V, IE = 0
50
nA
VEB = 3.0 V, IC = 0
50
nA
VEB = 4.5 V, IC = 0
100
nA
IC = 100 ìA, VCE = 5.0 V
MMBT5089
300
900
400
1200
Collector-emitter saturation voltage
VCE(sat)
IC =10 mA, IB = 1.0 mA
0.5
V
Base-emitter saturation voltage
VBE(on)
IC =10 mA, VCE = 5.0 V
0.8
V
Current gain - bandwidth product
fT
IC = 500 ìA, VCE = 5.0mA,f = 20 MHz
50
MHz
Collector-base capacitance
Ccb
VCB = 5.0 V,IE = 0, f = 100 KHz
4.0
pF
Emitter-base capacitance
Ceb
VBE = 0.5 V,IC = 0, f = 100 KHz
10
pF
hfe
IC = 1.0 mA, VCE = 5.0 V, f = 1.0 KHz
Small-signal current gain
MMBT5088
MMBT5089
MMBT5088
Noise figure
MMBT5089
hFE Classification
2
Max
30
MMBT5089
Emitter-base cut-off current
Typ
30
25
MMBT5089
Collector-cutoff current
Min
TYPE
MMBT5088
MMBT5089
Marking
1Q
1R
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NF
IC = 100 ìA, VCE = 5.0 V, Rs = 10KÙ,
f = 10 Hz to 15.7kHz
350
1400
450
1800
3.0
dB
2.0
dB