KEXIN MMBT2907AW

Transistors
IC
SMD Type
General Purpose Transistor
MMBT2907AW
Features
General purpose transistor.
Pb?Free package is available.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter voltage
Parameter
VCEO
-60
V
Collector-base voltage
VCBO
-60
V
Emitter-base voltage
VEBO
-5
V
IC
-600
mA
Collector current
Total Device Dissipation FR-5 Board
PD
150
mW
RèJA
833
/W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Thermal Resistance, Junction-to-Ambient
* FR-5 = 1.0X 0.75 X0.062 in.
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1
Transistors
IC
SMD Type
MMBT2907AW
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = -10 mA, IB = 0
-60
V
Collector-base breakdown voltage
V(BR)CBO
IC = -10 mA, IE = 0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE = -10 ìA, IC = 0
-5
V
Base cutoff current
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product
IBL
VCE = -30 V, VEB(off) = -0.5 V
-50
nA
ICEX
VCE = -30 V, VEB(off) = -0.5 V
-50
nA
HFE
IC = -0.1 mA, VCE = -10 V
IC = -1.0 mA, VCE = -10 V
IC = -10 mA, VCE = -10 V
IC = -150 mA, VCE = -10 V
IC = -500 mA, VCE = -10 V
VCE(sat)
VBE(sat)
fT
75
100
100
100
50
IC = -150 mA, IB = -15 mA
-0.4
IC = -500 mA, IB = -50 mA
-1.6
IC = -150 mA, IB = -15 mA
-1.3
IC = -500 mA, IB = -50 mA
-2.6
IC = -50 mA, VCE = 20 V, f = 100 MHz
200
V
MHz
Output capacitance
Cobo
VCB = -10 V, IE = 0, f = 1.0 MHz
8.0
pF
Input capacitance
Cibo
VEB = -2.0 V, IC = 0, f = 1.0 MHz
30
pF
45
ns
10
ns
40
ns
80
ns
30
ns
100
ns
Turn?on time
ton
Delay time
td
Rise time
tr
Storage time
ts
Fall time
tf
Turn?off time
* Pulse test: pulse width
toff
300 ìs, duty cycle
Marking
Marking
2
Testconditons
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20
2.0%.
VCC = -30 V,
IC = -150 mA, IB1 = -15 mA
VCC = -6.0 V, IC = -150 mA,
IB1 = IB2 = 15 mA