Transistors SMD Type High Voltage Transistors MMBTA43 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NPN Silicon 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO 200 V Collector-base voltage VCBO 200 V Emitter-base voltage VEBO 6 V IC 500 mA PD 225 mW Collector current-continuous Total device dissipation FR-5 board *1 @TA = 25 1.8 Derate above 25 Thermal resistance, junction-to-ambient RèJA 556 PD 300 mW/ /W Total device dissipation alumina substrate *2 @TA = 25 2.4 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature RèJA 417 TJ, Tstg -55 to +150 mW mW/ /W * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. www.kexin.com.cn 1 Transistors SMD Type MMBTA43 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-emitter breakdown voltage * V(BR)CEO IC = 1.0 mA, IB = 0 200 V Collector-base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 200 V Emitter-base breakdown voltage V(BR)EBO IE = 100 ìA, IC = 0 6 V Collector cutoff current ICBO VCB = 160 V, IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 4.0 V, IC = 0 0.1 ìA DC current gain * hFE 0.5 V IC = 1.0 mA, VCE = 10 V 25 IC = 10 mA, VCE = 10 V 40 IC = 30 mA, VCE = 10 V 40 Collector-emitter saturation voltage * VCE(sat) IC = 20 mA, IB = 2.0 mA Base-emitter saturation voltage * VBE(sat) IC = 20 mA, IB = 2.0 mA Current-gain - bandwidth product Collector-base capacitance * Pulse Test: Pulse Width Marking 300 ìs, Duty Cycle 2.0%. M1E www.kexin.com.cn fT Ccb Marking 2 Testconditons IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz 0.9 50 V MHz 4 pF