KEXIN MMBTA06

Transistors
IC
SMD Type
Driver Transistors
MMBTA05, MMBTA06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
NPN silicon.
0.55
Driver transistors.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
MMBTA05
MMBTA06
Unit
Collector-emitter voltage
VCEO
60
80
V
Collector-base voltage
VCBO
60
Emitter-base voltage
VEBO
4.0
V
Collector current
IC
500
mA
Total Device Dissipation FR-5 Board
(* 1) @TA = 25
Derate above 25
PD
225
1.8
mW
mW/
RèJA
556
/W
300
2.4
mW
mW/
RèJA
417
/W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (* 2)
@TA = 25
Derate above 25
Thermal Resistance, Junction-to-Ambient
PD
80
V
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4X 0.3 X 0.024 in. 99.5% alumina.
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1
Transistors
IC
SMD Type
MMBTA05, MMBTA06
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter breakdown voltage* MMBTA05
V(BR)CEO
Testconditons
IC = 1.0 mA, IB = 0
MMBTA06
Emitter-base breakdown voltage
Base cutoff current
Collector cutoff current
MMBTA05
Max
Unit
V
80
V
IE = 100 ìA, IC = 0
ICES
VCE = 60 V, IB = 0
0.1
ìA
VCB = 60 V, IE = 0
0.1
ìA
VCB = 80 V, IE = 0
0.1
ìA
ICBO
HFE
4
IC = 10 mA, VCE = 1.0 V
100
IC = 100 mA, VCE = 1.0 V
100
V
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.25
V
Base-emitter saturation voltage
VBE(on)
IC = 100 mA, VCE = 1.0 V
1.2
V
Current-gain-bandwidth product
fT
* Pulse test: pulse width
300 ìs, duty cycle
hFE Classification
2
Typ
60
V(BR)EBO
MMBTA06
DC current gain
Min
TYPE
MMBTA05
MMBTA06
Marking
1H
1GM
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2.0%.
IC = 10 mA, VCE = 2.0 V, f = 100 MHz
100
MHz