10T Series SEMICONDUCTOR RoHS RoHS TRIACs, 10A Snubberless and Standard MAIN FEATURES SYMBOL VALUE UNIT I T(RMS) 10 A V DRM /V RRM 600 to 1000 V I GT(Q1) 25 to 50 mA A2 A1 A2 G 1 2 3 DESCRIPTION The 10T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control TO-220AB (non-Insulated) (10TxxA) TO-220AB (lnsulated) (10TxxAI) operation in light dimmers, motor speed controllers,... The snubberless version are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the 10T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (File ref. :E320098) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS Tc = 95ºC F =50 Hz t = 20 ms 100 F =60 Hz t = 16.7 ms 105 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A TO-220AB insulated t p = 10 ms Storage temperature range 10 Tc = 105ºC 2 Average gate power dissipation UNIT TO-220AB I t I2t Value for fusing VALUE A 50 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 6 10T Series SEMICONDUCTOR RoHS RoHS ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS (3 quadrants) 10Txxxx SYMBOL IGT(1) TEST CONDITIONS V D = V DRM , R L = 3.3KΩ I T = 500 mA IL I G = 1.2 I GT 35 50 MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III (dI/dt)c(2) BW I - II - III T j = 125°C IH(2) dV/dt(2) CW mA V D = 12 V, R L = 30Ω VGT VGD Unit QUADRANT II MAX. 35 50 50 70 60 80 mA mA V D = 67% V DRM, gate open, T j = 125°C MIN. 500 1000 V/µs Without snubber, T j = 125°C MIN. 5.5 9 A/ms ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 10Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT (dV/dt)c(2) B 25 50 50 100 UNIT mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) C 25 50 40 50 80 100 mA mA V D = 67% V DRM , gate open, T j = 125°C MIN. 200 400 V/µs (dI/dt)c = 4.4 A/ms, T j = 125°C MIN. 5 10 V/µs STATIC CHARACTERISTICS SYMBOL TEST CONDITIONS VALUE UNIT VTM(2) I TM = 14 A, t P = 380 µs T j = 25°C MAX. 1.55 V Vt0(2) Threshold voltage T j = 125°C MAX. 0.85 V Dynamic resistance T j = 125°C MAX. 40 mΩ 5 µA 1 mA Rd (2) IDRM IRRM T j = 25°C VDRM = VRRM MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com Page 2 of 6 10T Series SEMICONDUCTOR RoHS RoHS THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient VALUE UNIT 1.5 2.4 °C/W 60 °C/W TO-220AB TO-220AB Insulated TO-220AB TO-220AB Insulated PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 50 mA Snubberless TO-220AB V V V 25 mA Standard TO-220AB V V V 35 mA Snubberless TO-220AB 600 V 800 V 1000 V 10TxxA-B/10 TxxAl-B V V 10TxxA-BW/10TxxAl-BW V 10TxxA-C/10TxxAl-C 10TxxA-CW/10TxxAl-CW ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 10TxxA-yy 10TxxA-yy TO-220AB 2.0g 50 Tube 10TxxAI-yy 10TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME 10 T 06 Current 10 = 10A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) IGT Sensitivity B = 50mA Standard C = 25mA Standard www.nellsemi.com BW = 50mA Standard CW = 35mA Standard Page 3 of 6 A - BW 10T Series SEMICONDUCTOR Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Fig.2 RMS on-state current versus case temperature (full cycle) IT(RMS)(A) P(W) 12 11 10 9 8 TO-220AB TO-220AB insulated 7 6 5 4 3 2 I T(RMS) (A) 1 T c (°C) 0 0 RoHS RoHS 1 4 3 2 5 6 7 8 9 10 0 25 50 75 100 125 Fig.4 On-state characteristics (maximum values) Fig.3 Relative variation of thermal impedance versus pulse duration ITM(A) K=[Z th /Rth] 1E+0 100 T j max V to =0.85V R d =40mΩ Zth(j-c) T j =T j max Zth(j-a) 1E-1 10 T j =25°C tp(s) 1E-3 1E-2 1E-1 1E+0 V TM (V) 1 1E-2 1E+1 1E+2 5E+2 1.0 0.5 Fig.5 Surge peak on-state current versus number of cycles 2.0 1.5 2.5 3.0 3.5 5.0 2 2 ITSM(A), I t (A s) 1000 Tj initial=25°C 100 90 80 t=20ms Non repetitive T j initial=25°C 70 One cycle I TSM dl/dt limitation 50A/µs 60 100 50 30 20 4.5 Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t ITSM(A) 110 40 4.0 l²t Repetitive T c =95°C 10 Number of cycles 0 t p (ms) 10 1 www.nellsemi.com 10 100 1000 Page 4 of 6 0.01 0.10 1.00 10.00 10T Series SEMICONDUCTOR Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values) RoHS RoHS Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) IGT,IH,IL [Tj ] / IGT,IH,IL [Tj =25 °C ] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 2.0 1.8 2.0 1.6 l GT 1.5 B 1.4 C 1.2 I H &I L 1.0 0.8 0.5 0.6 T j (°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 (dI/dt)c [Tj ] / (dI/dt)c [T j specified] 6 5 4 3 2 1 T j (°C) 0 25 www.nellsemi.com 50 (dV/dt)c (V/µs) 0.4 Fig.9 Relative variation of critical rate of decrease of main current versus junction temperature 0 BW/CW 1.0 75 100 125 Page 5 of 6 0.1 1.0 10.0 100.0 10T Series SEMICONDUCTOR RoHS RoHS Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) www.nellsemi.com 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) Page 6 of 6 0.56 (0.022) 0.36 (0.014) RoHS