RoHS RoHS N-HFA60PA60C SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 2 x 30 A FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level TO-247 AB BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA60PA60C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 20 A per leg continuous current, the HFA60PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA60PA60C is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 1 2 Common cathode 3 Anode 2 PRODUCT SUMMARY VR 600 V VF at 30A at 25 °C 1.4 V IF(AV) 2 x 30 A trr (typical) 23 ns TJ (maximum) 150 °C Qrr (typical) 55 nC lRRM (typical) 3.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF VALUES UNITS 600 V 30 Tc = 100 ºC 60 l FSM 320 Operating junction and storage temperature range T J , T Stg - 55 to + 150 www.nellsemi.com Page 1 of 5 Single pulse forward current A ºC N-HFA60PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM Maximum reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. 600 - - IF = 30 A - 1.4 1.8 IF = 60 A - 1.7 2.0 IF = 30 A, TJ = 125 ºC - 1.1 1.5 V R = V R rated - - T J = 125° C, V R = V R rated - - 100 500 µA V R = 150 V - 36 - pF MAX. UNITS TEST CONDITIONS IR = 100 µA DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge TEST CONDITIONS MIN. TYP. - 30 35 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 23 - trr1 TJ = 25 ºC - 30 50 trr2 TJ = 125 ºC - 95 - IRRM1 IF= 30A dIF/dt = -200 A/µs VR = 400 V ns - 3 - - 6 - TJ = 25 ºC - 55 - TJ = 125 ºC - 485 - TJ = 25 ºC IRRM2 TJ = 125 ºC Qrr1 Qrr2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. - - MAX. 300 - - 0.8 - - 0.4 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 60 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device www.nellsemi.com Case style TO-247AB (JEDEC) Page 2 of 5 HFA60PA60C g N-HFA60PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.80 D = 0.9 0.70 0.60 0.7 0.50 Note : 0.5 0.40 0.30 PDM Thermal impedance(°C/W), Z θJC 0.90 0.3 t1 t2 0.20 t Duty Factor D = 1 /t 2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.1 0.05 0.10 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 100 200 Reverse recovery time, t rr (ns) 160 T J = 175°C 30A 140 60 120 (A) Forward current, I F 80 T J = 125°C V R = 400V 60A 180 T J = 125°C 100 40 T J = -55°C 20 15A 80 60 40 T J = 25°C 0 0 0 0.5 0.8 1.0 1.4 2.2 1.8 0 Anode-to-cathode voltage (V), V F T J = 125°C V R = 400V 1000 60A 800 30A (nC) 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change Reverse recovery current, I RRM 1200 Reverse recovery charge, Q rr 400 600 15A 200 25 T J = 125°C V R = 400V 60A 20 30A 15 (A) Fig.4 Reverse recovery charge vs. current rate of change 400 200 Current rate of change(A/ μs ), -di F /dt 10 15A 5 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/ μ s), -di F /dt www.nellsemi.com 200 400 600 800 1000 Current rate of change (A/ μ s), -di F /dt Page 3 of 5 1200 N-HFA60PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig6. Dynamic parameters vs. junction temperature 60 Q rr t rr 1.0 0.8 50 40 I RRM 0.6 0.4 Q rr 0.2 10 0 25 50 75 100 125 150 25 Fig.8 Junction capacitance vs. reverse voltage 200 180 160 140 120 100 80 60 40 20 0 1 10 100 200 reverse voltage (V), V R www.nellsemi.com 50 75 100 125 150 Case temperature ( ° C) Junction temperature ( ° C),T J (pF) 30 20 0.0 0 Junction capacitance, C J Duty cycle = 0.5 T J = 175°C t rr l F(AV) (A) (Normalized to 1000A/ µ s) Dynamic parameters, K f 1.2 Fig.7 Maximum average forward current vs. case temperature Page 4 of 5 175 N-HFA60PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 www.nellsemi.com HFA 60 PA 60 C 2 3 4 5 6 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating ( 60 = 30 A, 30A x 2) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (60 = 600 V) 6 - Configuration (C = Center tap common cathode) Page 5 of 5