N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products FRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level TO-247 AB BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA30PA60C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 15 A per leg continuous current, the HFA30PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA30PA60C is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 1 2 Common cathode 3 Anode 2 PRODUCT SUMMARY VR 600 V VF at 15A at 25 °C 1.7 V IF(AV) 2 x 15 A trr (typical) 19 ns TJ (maximum) 150 °C Qrr (typical) 80 nC dI(rec)M/dt (typical) 160 A/µs IRRM (typical) 4.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF VALUES UNITS 600 V 15 Tc = 100 ºC 30 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD TJ, TStg Page 1 of 6 Tc = 25 ºC 74 Tc = 100 ºC 29 - 55 to + 150 A W ºC N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.55 1.7 IF = 30 A - 1.80 2.0 IF = 15 A, TJ = 125 ºC - 1.40 1.55 V R = V R rated - 1.0 T J = 125°C, V R = V R rated - 400 10 1000 50 pF - nH MAX. UNITS IR = 100 µA IF = 15 A Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 25 Series inductance LS Measured lead to lead 5 mm from package body - 12 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. - 25 33 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 19 - trr1 TJ = 25 ºC - 42 60 trr2 TJ = 125 ºC - 70 120 - 4.0 6.0 - 6.5 10 IRRM1 µA IF= 15A dIF/dt = -200 A/µs VR = 200 V TJ = 25 ºC ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC - 80 180 Qrr2 TJ = 125 ºC - 220 600 dl(rec)M/dt1 TJ = 25 ºC - 250 - TJ = 125 ºC - 160 - dl(rec)M/dt2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. - - MAX. 300 - - 1.7 - - 0.85 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device www.nellsemi.com Case style TO-247AB (JEDEC) Page 2 of 6 HFA30PA60C g N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum Forward Voltage Drop vs. Instantaneous Fig.2 Typical Reverse Current vs. Reverse Voltage (Per Leg) Forward Current (Per Leg) 10000 100 TJ = 150 ºC J 1000 100 TJ = 125 ºC 10 1 0.1 TJ = 25ºC TJ = 150 ºC 0.01 0 TJ = 125 ºC 10 100 200 300 400 500 600 Reverse Voltage - VR (V) TJ = 25 ºC Fig.3 Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 A TJ = 25ºC 1 1.0 A 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage Drop - V FM(V) 10 0 100 200 300 400 Reverse Voltage - VR (V) Fig.4 Maximum Thermal Impedance Z thJC Characteristics (Per Leg) Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) www.nellsemi.com Page 3 of 6 0.1 1 500 600 N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Typical Stored Charge vs. dIF/dt (Per Leg) Fig.5 Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 800 100 VR = 200V TJ = 125 ºC TJ = 25ºC I F = 30A I F = 15A I F = 5.0A 80 600 I F = 30A I F = 15A 60 IF = 5.0A 400 40 200 20 VR = 200V TJ = 125 ºC TJ = 25 ºC 0 10 0 dI F /dt - (A/s) 0 100 1000 dI F/dt - (A/s) 1000 Fig.8 Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Fig.6 Typical Recovery Current vs. dI F/dt (Per Leg) 10000 25 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125 ºC TJ = 25 ºC 20 dl (rec)M /dt(A/µs) I F = 30A I F = 15A I F = 5.0A 15 10 I F = 30A I F = 15A 1000 I F = 5.0A 5 0 100 www.nellsemi.com dI F/dt - (A/s) 100 100 1000 Page 4 of 6 dI F/dt - (A/s) 1000 N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01 Ω L = 70 焙 D.U.T. dIF/dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 RRM I extrapolated to zero current. www.nellsemi.com Page 5 of 6 (4) Q rr - area under curve defined by trr and IRRM Qrr = t rr x l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr N-HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 www.nellsemi.com HFA 30 PA 60 C 2 3 4 5 6 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (30 = 30 A, 15A x 2) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (60 = 600 V) 6 - Configuration (C = Center tap common cathode) Page 6 of 6