RECTRON MMST4401 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation (1) PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - NOTES : 1.Valid provided that terminals are kept at ambient temperature. UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 100µAdc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 100µAdc, I C = 0) V(BR)EBO 6.0 - Vdc Collector Cutoff Current (V CE = 35Vdc,I B =0) ICEO - 0.5 µAdc Collector Cutoff Current (V CB = 35Vdc, I E = 0) ICBO - 0.1 µAdc Emitter Cutoff Current (V EB = 5Vdc, I C = 0) IEBO - 0.1 µAdc IBL - 100 nAdc DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 20 - (I C = 1.0mAdc, V CE = 1.0Vdc) 40 - 50 - (I C = 150mAdc, V CE = 1.0Vdc) 100 300 (I C = 500mAdc, V CE = 2.0Vdc) 40 - - 0.40 - 0.75 - 0.95 - - OFF CHARACTERISTICS (2) Base Cutoff Current (V CE = 35Vdc, V EB(off) = 0.4Vdc ON CHARACTERISTICS (2) (I C = 10mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 250 - MHz Output Capacitance (V CB = 5Vdc, I E = 0, f= 1.0MHz) Cob - 6.5 pF Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Ceb - 30 pF Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) hie 1.0 15 kΩ Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hre 0.1 8.0 X 10-4 Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hfe 40 500 - Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) hoe 1.0 30 µs td - 15 tr - 20 ts - 225 tf - 30 Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE = 2Vdc, I C = 150mAdc, I B1 = 15mAdc) (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) ns ns <300µs,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON