RECTRON MMST5401

RECTRON
MMST5401
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (PNP)
FEATURES
* Power dissipation
O
Pcm: 0.2 W (Tamb=25 C)
* Collector current
Icm: -0.2 A
* Collector-base voltage
V(BR)CBO: -160 V
* Operationg and storage junction temperature range
O
O
TJ,Tstg: -55 Cto +150 C
SOT-323
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
0.051(1.30)
0.047(1.20)
REF .040(1.01)
0.092(2.35)
0.089(2.25)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.052(1.33)
0.050(1.27)
Ratings at 25 o C ambient temperature unless otherwise specified.
0.081(2.05)
0.077(1.95)
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
SYMBOL
VALUE
UNITS
-
-
-
Max. Steady State Power Dissipation (1)
PD
200
mW
Max. Operating Temperature Range
TJ
150
o
C
TSTG
-55 to +150
o
C
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (1)
Max. Instantaneous Forward Voltage at IF= 10mA
SYMBOL
MIN.
TYP.
MAX.
R θJA
-
-
625
VF
-
-
-
NOTES : 1. Valid provided that terminals are kept at ambient temperature.
UNITS
o
C/W
Volts
2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0)
V(BR)CEO
-150
-
Vdc
Collector-Base Breakdown Voltage (I C = -100µAdc, I E = 0)
V(BR)CBO
-160
-
Vdc
Emitter-Base Breakdown Voltage (I E = -10µAdc, I C = 0)
OFF CHARACTERISTICS (2)
V(BR)EBO
-5
-
Vdc
Collector Cutoff Current (V CB = -120Vdc, I E = 0)
ICBO
-
-50
nAdc
Emitter Cutoff Current (V EB = -3.0Vdc, I C = 0)
IEBO
-
-50
nAdc
50
-
60
240
50
-
-
-0.2
-
-0.5
-
-1
-
-1
100
300
MHz
ON CHARACTERISTICS (2)
DC Current Gain (I C = -1mAdc, V CE = -5Vdc)
(I C = -10mAdc, V CE = -5Vdc)
hFE
(I C = -50mAdc, V CE = -5Vdc)
Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc)
(I C = -50mAdc, I B = -5mAdc)
Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc)
(I C = -50mAdc, I B = -5mAdc)
VCE(sat)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz)
fT
Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz)
Cob
-
6
pF
Small-Signal Current Gain (I C = -1.0mAdc, V CE = -10Vdc, f= 1.0kHz)
hfe
40
200
-
Noise figure (I C = -0.2mAdc, V CE = -5Vdc, f= 1.0kHz,Rg=10 Ω )
NF
-
8
dB
<300µs,Duty Cycle<2.0%
NOTES : 2. Pulse Test: Pulse Width-
RECTRON